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RUE003N02TL123
Inventory:82638
  • Qty Unit Price price
  • 1 $0.336 $0.336
  • 10 $0.332 $3.32
  • 100 $0.328 $32.8
  • 1000 $0.324 $324
  • 10000 $0.32 $3200

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RUE003N02TL
  • Manufacturer No:
    RUE003N02TL
  • Manufacturer:
    ROHM
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    RUE003N02TL
  • SKU:
    10630617
  • Description:
    MOSFET N-CH 20V 300MA EMT3

RUE003N02TL Details

MOSFET N-CH 20V 300MA EMT3

RUE003N02TL Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Factory Lead Time: 7 Weeks
  • Published: 2008
  • Element Configuration: Single
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Power Dissipation: 150mW
  • Rise Time: 10ns
  • Fall Time (Typ): 10 ns
  • Turn-Off Delay Time: 15 ns
  • Turn On Delay Time: 5 ns
  • Vgs (Max): ±8V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Nominal Vgs: 300 mV
  • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4V
  • Rds On (Max) @ Id, Vgs: 1 Ω @ 300mA, 4V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Length: 1.6mm
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 20V
  • Width: 800μm
  • Technology: MOSFET (Metal Oxide)
  • Continuous Drain Current (ID): 300mA
  • Gate to Source Voltage (Vgs): 8V
  • Operating Temperature: 150°C TJ
  • Subcategory: FET General Purpose Power
  • Threshold Voltage: 300mV
  • Height: 700μm
  • Drain-source On Resistance-Max: 1.4Ohm
  • Package / Case: SC-75, SOT-416
  • Power Dissipation-Max: 150mW Ta
  • Current - Continuous Drain (Id) @ 25°C: 300mA Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V

ROHM — Manufacturer Introduction

ROHM
ROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets. Some of the most innovative equipment and devices use ROHM products. ROHM's presence in the North American market continues to expand with a logistic headquarters in San Diego, California, a design center in San Jose, California, a QA Center in Novi, Michigan, a sales office in Guadalajara, Mexico and a sales network that covers marketing, sales, and engineering support for the North and South American clients from Canada to Brazil. In addition to a direct sales force, ROHM enjoys the collaboration of several sales-representative organizations and industry leading electronics distributors. For more than forty years, ROHM has stayed focused on the fundamental philosophy of customization. The company has worked closely with equipment manufacturers to develop next generation equipment and use the technology acquired through these efforts to propose system solutions to its customers and continually provide them with high added values. The majority of ROHM's manufacturing equipment has been developed in-house. This has given ROHM the ability to respond immediately to changing market needs. The extent of ROHM products is a result of innovations and the capability to adjust to market demands. Automotive, telecommunication, computer, and consumer OEMs are among the leading end users of ROHM products.

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