Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:2000
- Qty Unit Price price
- 1 $1108.246 $1108.246
- 10 $1097.273 $10972.73
- 100 $1086.408 $108640.8
- 1000 $1075.651 $1075651
- 10000 $1065 $10650000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：STB30N65M5
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB30N65M5
- SKU：4563517
- Description：STB30N65M5: 650 V 0.139 Ohm Surface Mount N-Channel Power MOSFET - D2PAK
User Guide
User Guide
STB30N65M5 Details
STB30N65M5: 650 V 0.139 Ohm Surface Mount N-Channel Power MOSFET - D2PAK
STB30N65M5 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 3
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 22A
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Drain to Source Breakdown Voltage: 650V
- Turn On Delay Time: 50 ns
- Rise Time: 8 ns
- Vgs (Max): ±25V
- Power Dissipation: 140W
- Power Dissipation-Max: 140W Tc
- Current - Continuous Drain (Id) @ 25°C: 22A Tc
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Resistance: 139mOhm
- Rds On (Max) @ Id, Vgs: 139m Ω @ 11A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Pin Count: 4
- Terminal Form: GULL WING
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Factory Lead Time: 17 Weeks
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Peak Reflow Temperature (Cel): 245
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ): 10 ns
- Turn-Off Delay Time: 50 ns
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Pulsed Drain Current-Max (IDM): 88A
- Avalanche Energy Rating (Eas): 500 mJ
- Series: MDmesh? V
- Additional Feature: AVALANCHE ENERGY RATED
- Base Part Number: STB30N
- Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 100V
Search for similar products
STB30N65M5 Similar Products
The four parts on the right have similar specifications to STMicroelectronics & STB30N65M5
STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
