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STB9NK60ZDT4123
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STB9NK60ZDT4
  • Manufacturer No:
    STB9NK60ZDT4
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STB9NK60ZDT4
  • SKU:
    4600181
  • Description:
    MOSFET N-CH 600V 7A D2PAK

STB9NK60ZDT4 Details

MOSFET N-CH 600V 7A D2PAK

STB9NK60ZDT4 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Pin Count: 3
  • Termination: SMD/SMT
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 600V
  • Dual Supply Voltage: 600V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Current Rating: 7A
  • Continuous Drain Current (ID): 7A
  • Terminal Finish: Matte Tin (Sn) - annealed
  • JESD-30 Code: R-PSSO-G2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Height: 4.6mm
  • Length: 10.4mm
  • Pulsed Drain Current-Max (IDM): 28A
  • Turn-Off Delay Time: 42 ns
  • Power Dissipation-Max: 125W Tc
  • Current - Continuous Drain (Id) @ 25°C: 7A Tc
  • Vgs(th) (Max) @ Id: 4.5V @ 100μA
  • Nominal Vgs: 3.5 V
  • Rds On (Max) @ Id, Vgs: 950m Ω @ 3.5A, 10V
  • Series: SuperFREDmesh?
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 600V
  • Gate to Source Voltage (Vgs): 30V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Drain Current-Max (Abs) (ID): 7A
  • Operating Mode: ENHANCEMENT MODE
  • Peak Reflow Temperature (Cel): 245
  • Subcategory: FET General Purpose Power
  • Fall Time (Typ): 15 ns
  • Vgs (Max): ±30V
  • Turn On Delay Time: 22 ns
  • Power Dissipation: 125W
  • Width: 9.35mm
  • Rise Time: 17ns
  • Resistance: 950mOhm
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V
  • Base Part Number: STB9N

STMicroelectronics — Manufacturer Introduction

STMicroelectronics
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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