IRCZ44PBFVishay Siliconix
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    IRCZ44PBF123
    • Manufacturer No：
      IRCZ44PBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      156820
    • Description：
      Trans MOSFET N-CH 60V 50A 5-Pin(5+Tab) TO-220
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    IRCZ44PBF
    • Manufacturer No：
      IRCZ44PBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRCZ44PBF
    • SKU：
      156820
    • Description：
      Trans MOSFET N-CH 60V 50A 5-Pin(5+Tab) TO-220

    User Guide

    User Guide

    IRCZ44PBF Details

    Trans MOSFET N-CH 60V 50A 5-Pin(5+Tab) TO-220

    IRCZ44PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Part Status: Obsolete
    • Qualification Status: Not Qualified
    • Voltage - Rated DC: 60V
    • Number of Terminations: 5
    • Reach Compliance Code: unknown
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Terminal Position: SINGLE
    • Power Dissipation: 150W
    • Technology: MOSFET (Metal Oxide)
    • Width: 4.83mm
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Continuous Drain Current (ID): 50A
    • Case Connection: DRAIN
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Length: 10.67mm
    • Turn-Off Delay Time: 55 ns
    • Turn On Delay Time: 19 ns
    • Weight: 3.000003g
    • Power Dissipation-Max: 150W Tc
    • Drain-source On Resistance-Max: 0.028Ohm
    • Fall Time (Typ): 86 ns
    • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
    • Rds On (Max) @ Id, Vgs: 28m Ω @ 31A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Lead Free: Lead Free
    • Packaging: Tube
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Breakdown Voltage: 60V
    • Pin Count: 5
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Published: 1997
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Current Rating: 50A
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Rise Time: 120ns
    • Series: HEXFET?
    • Height: 9.02mm
    • Package / Case: TO-220-5
    • Current - Continuous Drain (Id) @ 25°C: 50A Tc
    • JESD-30 Code: R-PSFM-T5
    • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
    • Avalanche Energy Rating (Eas): 30 mJ
    • FET Feature: Current Sensing
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