IRF740STRRPBFVishay Siliconix
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    IRF740STRRPBF123
    • Manufacturer No：
      IRF740STRRPBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      162322
    • Description：
      MOSFET N-CH 400V 10A D2PAK
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    • Qty Unit Price price
    • 1 $1.734 $1.734
    • 10 $1.716 $17.16
    • 100 $1.699 $169.9
    • 1000 $1.682 $1682

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    IRF740STRRPBF
    • Manufacturer No：
      IRF740STRRPBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF740STRRPBF
    • SKU：
      162322
    • Description：
      MOSFET N-CH 400V 10A D2PAK

    User Guide

    User Guide

    IRF740STRRPBF Details

    MOSFET N-CH 400V 10A D2PAK

    IRF740STRRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • DS Breakdown Voltage-Min: 400V
    • FET Type: N-Channel
    • Height: 4.83mm
    • Operating Mode: ENHANCEMENT MODE
    • Pulsed Drain Current-Max (IDM): 40A
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Width: 9.65mm
    • Turn On Delay Time: 14 ns
    • Rise Time: 27 ns
    • Power Dissipation: 3.1W
    • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
    • Avalanche Energy Rating (Eas): 520 mJ
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Pin Count: 3
    • Published: 2012
    • Terminal Finish: Matte Tin (Sn)
    • Factory Lead Time: 11 Weeks
    • Transistor Element Material: SILICON
    • Continuous Drain Current (ID): 10A
    • Drain to Source Voltage (Vdss): 400V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Turn-Off Delay Time: 50 ns
    • Length: 10.67mm
    • Additional Feature: AVALANCHE RATED
    • Fall Time (Typ): 24 ns
    • Weight: 1.437803g
    • Current - Continuous Drain (Id) @ 25°C: 10A Tc
    • Drain-source On Resistance-Max: 0.55Ohm
    • Power Dissipation-Max: 3.1W Ta 125W Tc
    • Rds On (Max) @ Id, Vgs: 550m Ω @ 6A, 10V
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