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IRFR430ATRLPBF123
  • Manufacturer No:
    IRFR430ATRLPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    188912
  • Description:
    MOSFET N-CH 500V 5A DPAK
  • Quantity:
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  • Qty Unit Price price
  • 1 $0.862 $0.862
  • 10 $0.853 $8.53
  • 100 $0.844 $84.4
  • 1000 $0.835 $835
  • 10000 $0.8261 $8261

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IRFR430ATRLPBF
  • Manufacturer No:
    IRFR430ATRLPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFR430ATRLPBF
  • SKU:
    188912
  • Description:
    MOSFET N-CH 500V 5A DPAK

IRFR430ATRLPBF Details

MOSFET N-CH 500V 5A DPAK

IRFR430ATRLPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • JESD-609 Code: e3
  • Pin Count: 3
  • Terminal Form: GULL WING
  • Time@Peak Reflow Temperature-Max (s): 40
  • Drain Current-Max (Abs) (ID): 5A
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 30V
  • Height: 2.39mm
  • Terminal Finish: MATTE TIN
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Width: 6.22mm
  • Turn-Off Delay Time: 17 ns
  • Power Dissipation: 110W
  • Weight: 1.437803g
  • Power Dissipation-Max: 110W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Rds On (Max) @ Id, Vgs: 1.7 Ω @ 3A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Number of Pins: 3
  • Published: 2016
  • Peak Reflow Temperature (Cel): 260
  • Factory Lead Time: 11 Weeks
  • Continuous Drain Current (ID): 5A
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 500V
  • Pulsed Drain Current-Max (IDM): 20A
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • JESD-30 Code: R-PSSO-G2
  • Length: 6.73mm
  • Vgs (Max): ±30V
  • Fall Time (Typ): 16 ns
  • Rise Time: 27 ns
  • Vgs(th) (Max) @ Id: 4.5V @ 250μA
  • Turn On Delay Time: 8.7 ns
  • Current - Continuous Drain (Id) @ 25°C: 5A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V

Excellent

Based on reviews

Excellent

Based on reviews

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