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- Manufacturer No：SI1046R-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI1046R-T1-GE3
- SKU：265665
- Description：MOSFET 20V 606mA 0.25W 420mohm @ 4.5V
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User Guide
SI1046R-T1-GE3 Details
MOSFET 20V 606mA 0.25W 420mohm @ 4.5V
SI1046R-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Turn On Delay Time: 17 ns
- Vgs (Max): ±8V
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Continuous Drain Current (ID): 606mA
- Turn-Off Delay Time: 76 ns
- Drain-source On Resistance-Max: 0.42Ohm
- Package / Case: SC-75A
- Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- Published: 2016
- Power Dissipation: 250mW
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Terminal Form: FLAT
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Series: TrenchFET?
- Fall Time (Typ): 19 ns
- Subcategory: FET General Purpose Powers
- Terminal Finish: PURE MATTE TIN
- Rise Time: 19ns
- Vgs(th) (Max) @ Id: 950mV @ 250μA
- Power Dissipation-Max: 250mW Ta
- Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
- Rds On (Max) @ Id, Vgs: 420m Ω @ 606mA, 4.5V
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