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- Manufacturer No：SI1467DH-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI1467DH-T1-GE3
- SKU：245916
- Description：MOSFET P-CH 20V 2.7A SC-70-6
User Guide
User Guide
SI1467DH-T1-GE3 Details
MOSFET P-CH 20V 2.7A SC-70-6
SI1467DH-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Continuous Drain Current (ID): 2.7A
- Turn On Delay Time: 16 ns
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Fall Time (Typ): 43 ns
- Drain-source On Resistance-Max: 0.09Ohm
- Current - Continuous Drain (Id) @ 25°C: 2.7A Tc
- Power Dissipation-Max: 1.5W Ta 2.78W Tc
- Rds On (Max) @ Id, Vgs: 90m Ω @ 2A, 4.5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Drain Current-Max (Abs) (ID): 3A
- Number of Pins: 6
- Terminal Form: GULL WING
- Published: 2015
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- DS Breakdown Voltage-Min: 20V
- Technology: MOSFET (Metal Oxide)
- Gate to Source Voltage (Vgs): 8V
- FET Type: P-Channel
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Series: TrenchFET?
- Vgs (Max): ±8V
- Turn-Off Delay Time: 36 ns
- Rise Time: 43 ns
- Weight: 7.512624mg
- Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
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