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- Manufacturer No：SI6924AEDQ-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI6924AEDQ-T1-GE3
- SKU：230843
- Description：MOSFET 28V 4.6A 1.3W 33mohm @ 4.5V
User Guide
User Guide
SI6924AEDQ-T1-GE3 Details
MOSFET 28V 4.6A 1.3W 33mohm @ 4.5V
SI6924AEDQ-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 8
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- Power Dissipation: 1W
- Element Configuration: Dual
- Drain to Source Breakdown Voltage: 28V
- Terminal Finish: MATTE TIN
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Package / Case: 8-TSSOP (0.173, 4.40mm Width)
- Continuous Drain Current (ID): 4.6A
- Current - Continuous Drain (Id) @ 25°C: 4.1A
- Turn-Off Delay Time: 7 μs
- Drain-source On Resistance-Max: 0.033Ohm
- Turn On Delay Time: 950 ns
- Fall Time (Typ): 3.1 μs
- Base Part Number: SI6924
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Max Power Dissipation: 1W
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 14V
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- Drain Current-Max (Abs) (ID): 4.1A
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- FET Type: 2 N-Channel (Dual) Common Drain
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Rise Time: 1.4μs
- Rds On (Max) @ Id, Vgs: 33m Ω @ 4.6A, 4.5V
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