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SI6928DQ-T1-E3123
  • Manufacturer No:
    SI6928DQ-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    311301
  • Description:
    MOSFET 2N-CH 30V 4A 8TSSOP
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SI6928DQ-T1-E3
  • Manufacturer No:
    SI6928DQ-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    SI6928DQ-T1-E3
  • SKU:
    311301
  • Description:
    MOSFET 2N-CH 30V 4A 8TSSOP

SI6928DQ-T1-E3 Details

MOSFET 2N-CH 30V 4A 8TSSOP

SI6928DQ-T1-E3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Pin Count: 8
  • Terminal Form: GULL WING
  • Max Power Dissipation: 1W
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Drain Current-Max (Abs) (ID): 4A
  • Operating Mode: ENHANCEMENT MODE
  • Turn-Off Delay Time: 25 ns
  • Turn On Delay Time: 12 ns
  • FET Feature: Logic Level Gate
  • Resistance: 35mOhm
  • Rise Time: 9ns
  • Rds On (Max) @ Id, Vgs: 35m Ω @ 4A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Number of Terminations: 8
  • Published: 2016
  • Peak Reflow Temperature (Cel): 260
  • Power Dissipation: 1W
  • Element Configuration: Dual
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Breakdown Voltage: 30V
  • Terminal Finish: MATTE TIN
  • Continuous Drain Current (ID): 4A
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Fall Time (Typ): 20 ns
  • Package / Case: 8-TSSOP (0.173, 4.40mm Width)
  • FET Type: 2 N-Channel (Dual)
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Base Part Number: SI6928

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Excellent

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