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- Manufacturer No：SI7456CDP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7456CDP-T1-GE3
- SKU：305347
- Description：VISHAY SI7456CDP-T1-GE3 MOSFET Transistor, N Channel, 27.5 A, 100 V, 19500 ohm, 10 V, 1.2 V
User Guide
User Guide
SI7456CDP-T1-GE3 Details
VISHAY SI7456CDP-T1-GE3 MOSFET Transistor, N Channel, 27.5 A, 100 V, 19500 ohm, 10 V, 1.2 V
SI7456CDP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Pin Count: 8
- REACH SVHC: No SVHC
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2010
- Element Configuration: Single
- Power Dissipation: 5W
- Threshold Voltage: 1.2V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 50A
- Case Connection: DRAIN
- Series: TrenchFET?
- Continuous Drain Current (ID): 27.5A
- Weight: 506.605978mg
- Nominal Vgs: 1.2 V
- Terminal Finish: Pure Matte Tin (Sn)
- Drain-source On Resistance-Max: 0.0235Ohm
- Power Dissipation-Max: 5W Ta 35.7W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Number of Pins: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 100V
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Terminal Form: C BEND
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Subcategory: FET General Purpose Powers
- Package / Case: PowerPAK? SO-8
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- JESD-30 Code: R-XDSO-C5
- Vgs(th) (Max) @ Id: 2.8V @ 250μA
- Rds On (Max) @ Id, Vgs: 23.5m Ω @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C: 27.5A Tc
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