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- Manufacturer No：SIZ300DT-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SIZ300DT-T1-GE3
- SKU：342361
- Description：MOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V
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User Guide
SIZ300DT-T1-GE3 Details
MOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V
SIZ300DT-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Gate to Source Voltage (Vgs): 20V
- Length: 3mm
- Operating Temperature: -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM): 30A
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Height: 750μm
- FET Feature: Logic Level Gate
- Rise Time: 80 ns
- Package / Case: 8-PowerWDFN
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- FET Type: 2 N-Channel (Half Bridge)
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
- Power - Max: 16.7W 31W
- Rds On (Max) @ Id, Vgs: 24m Ω @ 9.8A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Published: 2015
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 30V
- Width: 3mm
- Terminal Finish: MATTE TIN
- Transistor Application: SWITCHING
- Subcategory: FET General Purpose Power
- Drain Current-Max (Abs) (ID): 11A
- Fall Time (Typ): 40 ns
- Series: TrenchFET?
- Continuous Drain Current (ID): 28A
- Vgs(th) (Max) @ Id: 2.4V @ 250μA
- Max Power Dissipation: 31W
- Case Connection: DRAIN SOURCE
- Avalanche Energy Rating (Eas): 7 mJ
- Current - Continuous Drain (Id) @ 25°C: 11A 28A
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