SUD50N03-11-E3Vishay Siliconix
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    SUD50N03-11-E3123
    • Manufacturer No：
      SUD50N03-11-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      349358
    • Description：
      MOSFET N-CH 30V 50A TO252
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    SUD50N03-11-E3
    • Manufacturer No：
      SUD50N03-11-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SUD50N03-11-E3
    • SKU：
      349358
    • Description：
      MOSFET N-CH 30V 50A TO252

    User Guide

    User Guide

    SUD50N03-11-E3 Details

    MOSFET N-CH 30V 50A TO252

    SUD50N03-11-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Pin Count: 4
    • Published: 2013
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 30V
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Continuous Drain Current (ID): 50A
    • Rise Time: 10ns
    • Case Connection: DRAIN
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Turn On Delay Time: 8 ns
    • Turn-Off Delay Time: 18 ns
    • JEDEC-95 Code: TO-252AA
    • Current - Continuous Drain (Id) @ 25°C: 50A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
    • Vgs(th) (Max) @ Id: 800mV @ 250μA (Min)
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Pulsed Drain Current-Max (IDM): 100A
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Fall Time (Typ): 6 ns
    • Series: TrenchFET?
    • Power Dissipation: 7.5W
    • Drain-source On Resistance-Max: 0.011Ohm
    • Rds On (Max) @ Id, Vgs: 11m Ω @ 25A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V
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