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- Manufacturer No：IRFPE40
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFPE40
- SKU：176573
- Description：MOSFET N-CH 800V 5.4A TO-247AC
User Guide
User Guide
IRFPE40 Details
MOSFET N-CH 800V 5.4A TO-247AC
IRFPE40 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 3
- Pbfree Code: no
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Drain-source On Resistance-Max: 2Ohm
- Package / Case: TO-247-3
- Length: 15.87mm
- Fall Time (Typ): 32 ns
- JEDEC-95 Code: TO-247AC
- Rise Time: 36 ns
- Height: 20.7mm
- Power Dissipation-Max: 150W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
- Avalanche Energy Rating (Eas): 490 mJ
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- RoHS Status: Non-RoHS Compliant
- Packaging: Tube
- Number of Pins: 3
- Published: 2016
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Pulsed Drain Current-Max (IDM): 22A
- Drain to Source Breakdown Voltage: 800V
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn-Off Delay Time: 100 ns
- Turn On Delay Time: 16 ns
- Continuous Drain Current (ID): 5.4A
- Width: 5.31mm
- Nominal Vgs: 4 V
- Weight: 38.000013g
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 5.4A Tc
- Rds On (Max) @ Id, Vgs: 2 Ω @ 3.2A, 10V
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