SI4542DY-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI4542DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      261163
    • Description：
      MOSFET 30V 6.9/6.1A 2W
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    • Manufacturer No：
      SI4542DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI4542DY-T1-E3
    • SKU：
      261163
    • Description：
      MOSFET 30V 6.9/6.1A 2W

    User Guide

    User Guide

    SI4542DY-T1-E3 Details

    MOSFET 30V 6.9/6.1A 2W

    SI4542DY-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Pin Count: 8
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2014
    • Max Power Dissipation: 2W
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • Rise Time: 10ns
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Resistance: 25mOhm
    • Turn-Off Delay Time: 55 ns
    • Series: TrenchFET?
    • FET Type: N and P-Channel
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Rds On (Max) @ Id, Vgs: 25m Ω @ 6.9A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 8
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • Power Dissipation: 2W
    • Drain to Source Breakdown Voltage: 30V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Pulsed Drain Current-Max (IDM): 40A
    • Subcategory: Other Transistors
    • Fall Time (Typ): 25 ns
    • Drain Current-Max (Abs) (ID): 6.9A
    • FET Feature: Logic Level Gate
    • Continuous Drain Current (ID): 5.7A
    • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
    • Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
    • Base Part Number: SI4542
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