SI6933DQ-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI6933DQ-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      266341
    • Description：
      MOSFET 2P-CH 30V 8-TSSOP
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    • Manufacturer No：
      SI6933DQ-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI6933DQ-T1-E3
    • SKU：
      266341
    • Description：
      MOSFET 2P-CH 30V 8-TSSOP

    User Guide

    User Guide

    SI6933DQ-T1-E3 Details

    MOSFET 2P-CH 30V 8-TSSOP

    SI6933DQ-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Pin Count: 8
    • Terminal Form: GULL WING
    • Max Power Dissipation: 1W
    • Time@Peak Reflow Temperature-Max (s): 40
    • Published: 2008
    • Height: 1mm
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Width: 4.4mm
    • Rise Time: 10ns
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Package / Case: 8-TSSOP (0.173, 4.40mm Width)
    • FET Feature: Logic Level Gate
    • Drain to Source Breakdown Voltage: -30V
    • Turn-Off Delay Time: 33 ns
    • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
    • Weight: 157.991892mg
    • Continuous Drain Current (ID): -2.3A
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 8
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Power Dissipation: 1W
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Length: 3mm
    • Terminal Finish: MATTE TIN
    • Operating Mode: ENHANCEMENT MODE
    • Fall Time (Typ): 10 ns
    • Drain Current-Max (Abs) (ID): 3.5A
    • Turn On Delay Time: 13 ns
    • Series: TrenchFET?
    • Resistance: 45mOhm
    • FET Type: 2 P-Channel (Dual)
    • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
    • Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
    • Rds On (Max) @ Id, Vgs: 45m Ω @ 3.5A, 10V
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