SI1307DL-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI1307DL-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      332650
    • Description：
      MOSFET 12V 0.91A
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    • Manufacturer No：
      SI1307DL-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI1307DL-T1-E3
    • SKU：
      332650
    • Description：
      MOSFET 12V 0.91A

    User Guide

    User Guide

    SI1307DL-T1-E3 Details

    MOSFET 12V 0.91A

    SI1307DL-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 3
    • Pin Count: 3
    • Terminal Form: GULL WING
    • Reach Compliance Code: unknown
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Gate to Source Voltage (Vgs): 8V
    • Drain to Source Breakdown Voltage: -12V
    • Package / Case: SC-70, SOT-323
    • Length: 2.1844mm
    • Series: TrenchFET?
    • Width: 1.3462mm
    • Rise Time: 32 ns
    • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
    • Current: 68A
    • Vgs(th) (Max) @ Id: 450mV @ 250μA (Min)
    • Power Dissipation-Max: 290mW Ta
    • Rds On (Max) @ Id, Vgs: 290m Ω @ 1A, 4.5V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Voltage: 12V
    • Published: 2008
    • Element Configuration: Single
    • Terminal Finish: MATTE TIN
    • Operating Mode: ENHANCEMENT MODE
    • Height: 990.6μm
    • FET Type: P-Channel
    • Turn On Delay Time: 7.5 ns
    • Continuous Drain Current (ID): 850mA
    • Turn-Off Delay Time: 17 ns
    • Fall Time (Typ): 32 ns
    • Vgs (Max): ±8V
    • Resistance: 290mOhm
    • Power Dissipation: 290mW
    • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
    • Current - Continuous Drain (Id) @ 25°C: 850mA Ta
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