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- Manufacturer No：IXGH16N170
- Manufacturer：IXYS
- Category：Transistors - IGBTs - Single
- Datasheet：IXGH16N170
- SKU：3916459
- Description：Trans IGBT Chip N-CH 1.7KV 32A 3-Pin(3+Tab) TO-247AD
User Guide
User Guide
IXGH16N170 Details
Trans IGBT Chip N-CH 1.7KV 32A 3-Pin(3+Tab) TO-247AD
IXGH16N170 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Packaging: Tube
- Pin Count: 3
- Published: 2006
- Element Configuration: Single
- Gate-Emitter Voltage-Max: 20V
- Operating Temperature: -55°C~150°C TJ
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time: 28 Weeks
- Polarity/Channel Type: N-CHANNEL
- Package / Case: TO-247-3
- Max Collector Current: 32A
- Turn On Delay Time: 45 ns
- Subcategory: Insulated Gate BIP Transistors
- Length: 16.26mm
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Collector Emitter Voltage (VCEO): 1.7kV
- Power Dissipation: 190W
- Height: 21.46mm
- Turn Off Time-Nom (toff): 1600 ns
- JEDEC-95 Code: TO-268AA
- Test Condition: 1360V, 16A, 10 Ω, 15V
- Td (on/off) @ 25°C: 45ns/400ns
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Gate-Emitter Thr Voltage-Max: 5V
- Number of Pins: 3
- Terminal Form: GULL WING
- Transistor Element Material: SILICON
- Input Type: Standard
- Collector Emitter Saturation Voltage: 2.7V
- JESD-609 Code: e1
- Width: 5.3mm
- JESD-30 Code: R-PSSO-G2
- Current - Collector Pulsed (Icm): 80A
- Case Connection: COLLECTOR
- Turn-Off Delay Time: 200 ns
- Transistor Application: POWER CONTROL
- Turn On Time: 90 ns
- IGBT Type: NPT
- Collector Emitter Breakdown Voltage: 1.7kV
- Weight: 6.500007g
- Max Power Dissipation: 190W
- Fall Time-Max (tf): 1100 ns
- Gate Charge: 78nC
- Base Part Number: IXG*16N170
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 16A
- Switching Energy: 9.3mJ (off)
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