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  • Manufacturer No:
    IRF820
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4601202
  • Description:
    PowerMESH™ II Tube Through Hole N-Channel Mosfet Transistor 4A Tc 4A 80W 13ns
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  • Manufacturer No:
    IRF820
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF820
  • SKU:
    4601202
  • Description:
    PowerMESH™ II Tube Through Hole N-Channel Mosfet Transistor 4A Tc 4A 80W 13ns

IRF820 Details

PowerMESH™ II Tube Through Hole N-Channel Mosfet Transistor 4A Tc 4A 80W 13ns

IRF820 Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Radiation Hardening: No
  • JESD-609 Code: e3
  • Packaging: Tube
  • Pin Count: 3
  • Terminal Finish: Matte Tin (Sn)
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 500V
  • Gate to Source Voltage (Vgs): 30V
  • Continuous Drain Current (ID): 4A
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-220-3
  • JEDEC-95 Code: TO-220AB
  • Drain-source On Resistance-Max: 3Ohm
  • Vgs (Max): ±30V
  • Fall Time (Typ): 13 ns
  • Rise Time: 13ns
  • Current - Continuous Drain (Id) @ 25°C: 4A Tc
  • Feedback Cap-Max (Crss): 50 pF
  • Avalanche Energy Rating (Eas): 210 mJ
  • Rds On (Max) @ Id, Vgs: 3 Ω @ 1.5A, 10V
  • Turn On Time-Max (ton): 137ns
  • Base Part Number: IRF8
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • RoHS Status: Non-RoHS Compliant
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Lead Free: Contains Lead
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 500V
  • Drain Current-Max (Abs) (ID): 4A
  • FET Type: N-Channel
  • Pulsed Drain Current-Max (IDM): 12A
  • Current Rating: 2.5A
  • Operating Temperature: 150°C TJ
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 10 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Power Dissipation: 80W
  • JESD-30 Code: R-PSIP-T3
  • Additional Feature: HIGH VOLTAGE
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Power Dissipation-Max: 80W Tc
  • Series: PowerMESH? II
  • Turn Off Time-Max (toff): 245ns
  • Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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